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CPD73 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD73 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CMFBR-6F GROSS DIE PER 3 INCH WAFER 10,000 PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 (+DC) 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC) 3.0 x 7.0 MILS Top Side Metalization Al - 12,000Å Back Side Metalization Au - 5,000Å www.centr a lsemi.com R2 (22-March 2010) |
Similar Part No. - CPD73_10 |
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Similar Description - CPD73_10 |
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