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BT331 Datasheet(PDF) 1 Page - BeRex Corporation

Part # BT331
Description  700-2700 MHz 1.5~2.0W Power Amplifier
PDF  20 Pages
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Manufacturer  BEREX [BeRex Corporation]
Direct Link  http://www.berex.com
Logo BEREX - BeRex Corporation

BT331 Datasheet(HTML) 1 Page - BeRex Corporation

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1
700-2700 MHz 1.5~2.0W Power Amplifier
BT331
OIP3 = 52.0 dBm @ 1900 MHz
Gain = 19.8 dB @ 900 MHz
Output P1 dB = 33.2 dBm @ 1900 MHz
50 Ω Cascadable
Highly Reliable InGaP/GaAs HBT Technology
Lead-free/RoHS-compliant SOIC-8 SMT package
BeRex’s BT331 is a high power and a high
dynamic range amplifier in a low cost sur-
face mount package(SOIC-8) with a RoHS-
compliant, that incorporates reliable het-
erojunction-bipolar-transistor (HBT) de-
vices fabricated with InGaP GaAs technol-
ogy.
This device is designed for use where high
linearity is required and features high OIP3
and Power with low consumption current
(400mA) and requires a few external
matching components such as a DC block-
ing capacitors on the In/Output pin, a by-
pass capacitor and a RF choke for the out
port.
Product Description
Device Features
1 Device performance is measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 is measured with two tones at an output of 20 dBm per tone separated by 1 MHz.
Typical Performance
1
Absolute Maximum Ratings
BeRex
● website: www.berex.com
● email: sales@berex.com
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2010 BeRex
Parameter
Frequency
Unit
1900
2140
2450
2600
MHz
900
Gain
14.0
13.2
12.1
12.1
dB
19.8
S11
-22.6
-20.7
-23.0
-19.0
dB
-16.7
S22
-13.5
-11.7
-10.0
-12.7
dB
-10.6
OIP3
2
52.0
52.0
47.5
47.0
dBm
49.0
P1dB
33.2
32.6
32.0
31.2
dBm
32.0
IS-95C ACPR
-
-
-
-
dBm
23.3
WCDMA ACLR
23.3
23.4
21.5
21.5
dBm
-
Noise Figure
5.0
5.0
5.3
5.4
dB
4.8
Min.
Typical
Max.
Unit
Bandwidth
700
2700
MHz
IC @ (Vc = 5V)
360
400
440
mA
VC
5.0
V
RTH
10.0
°C/W
Parameter
Unit
Rating
Operating Case Temperature
°C
-40 to +85
Storage Temperature
°C
-55 to +155
Junction Temperature
°C
+220
Operating Voltage
V
+5.5
Supply Current
mA
900
Input RF Power
dBm
28
*Operation of this device above any of these parameters may result in permanent damage.
Application Circuits
*external matching circuit: refer to the page 4 to 16.
Rev. A
*ACPR CH Power is measured at 55dBc, ACLR CH Power is measured at 50dBc.
*ACPR Test set-up: IS-95 CDMA, 9Ch. FWD, +885KHz offset, PAR 9.7dB at 0.01% Prob.
*ACLR Test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset, PAR 10.34 at 0.01% Prob.
RF Choke
RF In
RF Out
Vcc
BT331
DC
Block
Bypass
DC
Block
YY = Year, WW = Work week,
XX = Wafer Number
 Base station Infrastructure
 Commercial/Industrial/Military wireless system
Applications


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