ATP201

No. A1547-4/4

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

structural design.

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mentioned above.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

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PS

This catalog provides information as of August, 2009. Specifications and information herein are subject

to change without notice.

Note on usage : Since the ATP201 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

A S O

VGS -- Qg

PD -- Tc

Total Gate Charge, Qg -- nC

Drain-to-Source Voltage, VDS -- V

Case Temperature, Tc --

°C

EAS -- Ta

Ambient Temperature, Ta --

°C

0

0

25

50

75

100

125

150

100

80

60

20

40

120

175

IT14011

IT14968

0.1

1.0

2

3

5

7

2

10

3

2

5

7

2

0.1

IDP=105A

ID=35A

100

μs

10ms

100ms

Tc=25

°C

Single pulse

IT14967

04

16

12

20

8

214

18

10

6

0

2

4

6

1

3

5

8

7

9

10

VDS=15V

ID=35A

1.0

23

5 7

2

10

35 7

2

0

0

20

40

60

80

100

120

140

160

30

35

25

15

20

10

5

IT14969

10

μs

35

100

3

5

7

Operation in

this area is

limited by RDS(on).

PW

≤10μs