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ATP214 Datasheet(PDF) 3 Page - Sanyo Semicon Device

Part # ATP214
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP214 Datasheet(HTML) 3 Page - Sanyo Semicon Device

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ATP214
No. A1712-3/4
A S O
Drain-to-Source Voltage, VDS -- V
IT15514
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5
5
3
2
7
10
0.1
IDP=225A (PW≤10μs)
ID=75A
100
μs
1ms
10ms
100ms
Operation in
this area is
limited by RDS(on).
1.0
23
5 7
2
10
100
35 7
2 3
7
5
10
μs
100
Tc=25
°C
Single pulse
RDS(on) -- VGS
RDS(on) -- Tc
IS -- VSD
SW Time -- ID
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
°C
Drain Current, ID -- A
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Diode Forward Voltage, VSD -- V
| yfs | -- I
D
Ciss, Coss, Crss -- VDS
060
20
30
40
50
10
IT15701
IT15700
IT15699
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.01
7
5
3
2
IT15698
f=1MHz
Coss
Crss
0.1
1.0
2
23
5
23
57
10
35 7
100
7
5
100
1000
10
3
2
5
7
3
2
5
7
0.1
1.0
23
5 7
7
23
5
100
VDD=30V
VGS=10V
td(off)
tf
td(on)
t r
IT15696
1
2
20
16
24
36
58
9
710
12
11
14 15
13
18
12
16
14
4
6
10
8
ID=10A
38A
2
0.1
7
5
3
2
10
22
35 7
Ciss
Tc=
--25
°C
75°
C
25
°C
1.0
7
5
7
3
2
10
100
7
5
3
2
3
2
1.0
7
5
3
2
10
7
5
3
2
100
7
5
3
2
3
100
1000
10000
7
5
7
7
5
3
2
3
2
19A
IT15697
--60 --40 --20
0
20
40
60
80
100 120 140 160
0
20
14
6
2
18
12
10
16
8
4
V GS
=4.0V
, I D
=10A
V GS
=4.5V
, I D
=19A
V GS
=10.0V
, I D
=38A
Tc=25
°C
Single pulse
Single pulse
VDS=10V
Single pulse
VGS=0V
Single pulse
VGS -- Qg
Total Gate Charge, Qg -- nC
IT15711
0
0
1
2
3
4
5
6
7
8
100
90
80
70
10
20
30
40
60
50
10
9
VDS=30V
ID=75A



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