FW813 datasheet(2/4 Pages) SANYO

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FW813

No. A1884-2/4

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

Forward Transfer Admittance

| yfs |

VDS=10V, ID=5A

4.2

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=5A, VGS=10V

mΩ

RDS(on)2

ID=3A, VGS=4.5V

mΩ

RDS(on)3

ID=3A, VGS=4V

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

725

Output Capacitance

Coss

VDS=20V, f=1MHz

Reverse Transfer Capacitance

Crss

VDS=20V, f=1MHz

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

9.6

Rise Time

See speciﬁed Test Circuit.

Turn-OFF Delay Time

td(off)

See speciﬁed Test Circuit.

Fall Time

See speciﬁed Test Circuit.

Total Gate Charge

VDS=30V, VGS=10V, ID=5A

Gate-to-Source Charge

Qgs

VDS=30V, VGS=10V, ID=5A

2.4

Gate-to-Drain “Miller” Charge

Qgd

VDS=30V, VGS=10V, ID=5A

3.2

Diode Forward Voltage

VSD

IS=5A, VGS=0V

0.81

1.2

Switching Time Test Circuit

PW=10μs

D.C.≤1%

P.G

50Ω

ID=5A

RL=6Ω

VDD=30V

VOUT

FW813

VIN

10V

VIN

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

ID -- VDS

IT16122

IT16123

4.0

1.0

0.2

0.3

0.4

0.1

0.5

0.6

0.7

0.8

0.9

1.5

2.5

3.5

1.0

0.5

2.0

3.0

VGS=2.5V

°C

VDS=10V

3.0V

3.5V

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