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ECH8673 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ECH8673
Description  N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
PDF  6 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8673 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ECH8673
No. A1892-2/6
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=40V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=2A
1.7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=2A, VGS=10V
65
85
mΩ
RDS(on)2
ID=1A, VGS=4.5V
105
147
mΩ
RDS(on)3
ID=1A, VGS=4V
125
175
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
230
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
36
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
9.9
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
5.8
ns
Rise Time
tr
See specified Test Circuit.
10.6
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
18.5
ns
Fall Time
tf
See specified Test Circuit.
9.8
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=3.5A
5.3
nC
Gate-to-Source Charge
Qgs
VDS=20V, VGS=10V, ID=3.5A
1.1
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=20V, VGS=10V, ID=3.5A
1.1
nC
Diode Forward Voltage
VSD
IS=3.5A, VGS=0V
0.84
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--40V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--1.5A
2.7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--1.5A, VGS=--10V
125
163
mΩ
RDS(on)2
ID=--0.75A, VGS=--4.5V
190
266
mΩ
RDS(on)3
ID=--0.75A, VGS=--4V
215
301
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
198
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
36
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
8.1
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
5.8
ns
Rise Time
tr
See specified Test Circuit.
10.3
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
27.6
ns
Fall Time
tf
See specified Test Circuit.
17.3
ns
Total Gate Charge
Qg
VDS=--20V, VGS=--10V, ID=--2.5A
5.9
nC
Gate-to-Source Charge
Qgs
VDS=--20V, VGS=--10V, ID=--2.5A
0.84
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--20V, VGS=--10V, ID=--2.5A
1.3
nC
Diode Forward Voltage
VSD
IS=--2.5A, VGS=0V
--0.87
--1.2
V



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