2SC2166 datasheet(1/2 Pages) JMNIC

Part #	2SC2166

Description	Silicon NPN Power Transistor

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Product Specification

Website：www.jmnic.com

Silicon NPN Power Transistor

2SC2166

DESCRIPTION

・High Power Gain-

: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V

・High Reliability

APPLICATIONS

・Designed for 3 to 4 watts output power amplifiers in HF band

mobile radio applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCER

Collector-Emitter Voltage RBE= 10Ω

45

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current

4

A

Collector Power Dissipation

@TC=25℃

12.5

PC

Collector Power Dissipation

@Ta=25℃

1.5

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal Resistance,Junction to Ambient

83

℃/W

Rth j-c

Thermal Resistance,Junction to Case

10

℃/W

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2SC2166 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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