Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

FW906 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # FW906
Description  General-Purpose Switching Device Applications
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW906 Datasheet(HTML) 2 Page - Sanyo Semicon Device

  FW906 Datasheet HTML 1Page - Sanyo Semicon Device FW906 Datasheet HTML 2Page - Sanyo Semicon Device FW906 Datasheet HTML 3Page - Sanyo Semicon Device FW906 Datasheet HTML 4Page - Sanyo Semicon Device FW906 Datasheet HTML 5Page - Sanyo Semicon Device FW906 Datasheet HTML 6Page - Sanyo Semicon Device  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
FW906
No. A1809-2/6
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=8A
4.5
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=8A, VGS=10V
18
24
mΩ
RDS(on)2
ID=4A, VGS=4.5V
29
41
mΩ
RDS(on)3
ID=4A, VGS=4V
39
55
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
690
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
120
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
9.2
ns
Rise Time
tr
See specified Test Circuit.
44
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
41
ns
Fall Time
tf
See specified Test Circuit.
26
ns
Total Gate Charge
Qg
VDS=15V, VGS=10V, ID=8A
12
nC
Gate-to-Source Charge
Qgs
VDS=15V, VGS=10V, ID=8A
2.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=15V, VGS=10V, ID=8A
1.9
nC
Diode Forward Voltage
VSD
IS=8A, VGS=0V
0.81
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--6A
8.5
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--6A, VGS=--10V
31
41
mΩ
RDS(on)2
ID=--3A, VGS=--4.5V
49
69
mΩ
RDS(on)3
ID=--3A, VGS=--4V
57
80
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
600
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
160
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
120
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
6.6
ns
Rise Time
tr
See specified Test Circuit.
37
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
63
ns
Fall Time
tf
See specified Test Circuit.
48
ns
Total Gate Charge
Qg
VDS=--15V, VGS=--10V, ID=--6A
12
nC
Gate-to-Source Charge
Qgs
VDS=--15V, VGS=--10V, ID=--6A
1.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--15V, VGS=--10V, ID=--6A
2.7
nC
Diode Forward Voltage
VSD
IS=--6A, VGS=0V
--0.83
--1.2
V



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com