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MA4SPS302 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA4SPS302 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 4 page ![]() 1 SURMOUNTTM PIN Diode RoHS Compliant Rev. V4 MA4SPS302 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance High Average and Peak Power Handling RoHS Compliant Description This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM Tech’s patented HMIC TM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. Parameter Absolute Maximum Forward Current 600mA Reverse Voltage | -100V | Operating Temperature -55°C to +125°C Storage Temperature -55 °C to +150°C Junction Temperature +175°C Dissipated Power ( RF & DC ) 800mW Mounting Temperature +260°C for 30 seconds Absolute Maximum Ratings TAMB = 25°C (unless otherwise specified) MA4SPS302 1. Backside metal: 0.1 µM thick. 2. Yellow hatched areas indicate backside ohmic gold DIM INCHES MM Min. Max. Min. Max. A 0.052 0.056 1.321 1.422 B 0.020 0.024 0.508 0.610 C 0.004 0.006 0.102 0.152 D 0.018 0.020 0.457 0.508 E 0.014 0.016 0.356 0.406 |
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