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MA4SPS302 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # MA4SPS302
Description  SURMOUNTTM PIN Diode RoHS Compliant
PDF  4 Pages
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MA4SPS302 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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1
SURMOUNTTM PIN Diode
RoHS Compliant
Rev. V4
MA4SPS302
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
 Surface Mount
 No Wire Bonding Required
 Rugged Silicon-Glass Construction
 Silicon Nitride Passivation
 Polymer Scratch Protection
 Low Parasitic Capacitance and Inductance
 High Average and Peak Power Handling
 RoHS Compliant
Description
This device is a Silicon-Glass PIN diode chip
fabricated with M/A-COM Tech’s patented HMIC
TM
process. This device features two silicon pedestals
embedded in a low loss, low dispersion glass. The
diode is formed on the top of one pedestal and
connections to the backside of the device are
facilitated
by
making
the
pedestal
sidewalls
electrically
conductive.
Selective
backside
metallization is applied producing a surface mount
device. This vertical conic topology provides for
exceptional heat transfer from the active area. The
topside is fully encapsulated with silicon nitride and
has an additional polymer layer for scratch and
impact protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
Parameter
Absolute Maximum
Forward Current
600mA
Reverse Voltage
| -100V |
Operating Temperature
-55°C to +125°C
Storage Temperature
-55 °C to +150°C
Junction Temperature
+175°C
Dissipated Power
( RF & DC )
800mW
Mounting Temperature
+260°C for 30 seconds
Absolute Maximum Ratings
TAMB = 25°C (unless otherwise specified)
MA4SPS302
1. Backside metal: 0.1 µM thick.
2. Yellow hatched areas indicate backside ohmic gold
DIM
INCHES
MM
Min.
Max.
Min.
Max.
A
0.052
0.056
1.321
1.422
B
0.020
0.024
0.508
0.610
C
0.004
0.006
0.102
0.152
D
0.018
0.020
0.457
0.508
E
0.014
0.016
0.356
0.406


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