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2SB798L-X-AB3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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2SB798L-X-AB3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R208-020.B POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) SOT-89 1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2SB798L-X-AB3-R 2SB798G-X-AB3-R SOT-89 B C E Tape Reel 2SB798L-X-AB3-R (1)Packing Type (2)Package Type (1) R: Tape Reel (2) AB3: SOT-89 (3) x: refer to Classification of hFE1 (3)Rank (4)Lead Free (4) Halogen Free, L: Lead Free |
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