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2SC4242 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 2SC4242
Description  SWITCHMODE SERIES NPN POWER TRANSISTORS
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC4242 Datasheet(HTML) 2 Page - Unisonic Technologies

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2SC4242
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-033.A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Base Voltage
VCBO
450
V
Emitter-Base Voltage
VEBO
8.0
V
Continuous
IC
7.0
Collector Current
Peak
ICM
14
A
Base Current
IB
2.0
A
40
W
Total Power Dissipation @TC=25℃
Derate Above 25℃
PD
0.32
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction -Case
θJC
4
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
BVCEO ICEO=100mA, IB=0
400
V
Collector-Base Breakdown Voltage
BVCBO ICBO=1.0mA, IE=0
450
V
Emitter-Base Breakdown Voltage
BVEBO
IEBO=1.0mA, IC=0
8.0
V
Collector Cutoff Current
ICBO
VCBO=450V, IE=0
100
µA
Emitter Cutoff Current
IEBO
VEBO=8.0V, IC=0
100
µA
ON CHARACTERISTICS
DC Current Gain
hFE
IC=4.0A, VCE=5.0V
10
Collector-Emitter Saturation Voltage
VCE (SAT) IC=4.0A, IB=800mA
0.8
V
Base-Emitter Saturation Voltage
VBE (SAT) IC=4.0A, IB=800mA
1.2
V
SWITCHING CHARACTERISTICS
On Time
tON
1.0
µs
Storage Time
tS
2.5
µs
Fall Time
tF
VCC=150V, IC=5.0A
IB1= -IB2=1.0A, RL=30Ω
0.5
µs
Note: Pulse Test: Pulse Width=300µs, Duty Cycle ≤ 2.0%



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