3N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-283.D

PARAMETER

SYMBOL

RATINGS

UNIT

800

V

800

V

Gate-Source Voltage

±30

V

30(MIN)

V

Insulation Withstand Voltage (DC) TO-220F/ TO-220F1

2500

V

Avalanche Current (Note 2)

3

A

Continuous Drain Current

3

A

Pulsed Drain Current

10

A

Single Pulse Avalanche Energy (Note 3)

170

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

70

Power Dissipation

TO-220F/ TO-220F1

25

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

4.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220

62.5

Junction to Ambient

TO-220F/ TO-220F1

62.5

°C/W

TO-220

1.78

Junction to Case

TO-220F/ TO-220F1

5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

800

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

±10

μA

ON CHARACTERISTICS

Gate Threshold Voltage

3

3.75 4.5

V

Static Drain-Source On-State Resistance

3.8

4.5

Ω

Forward Transconductance (Note 1)

2.1

S

DYNAMIC CHARACTERISTICS

Input Capacitance

485

pF

Output Capacitance

57

pF

Reverse Transfer Capacitance

11

pF

Equivalent Output Capacitance (Note 2)

22

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

17

ns

Turn-On Rise Time

27

ns

Turn-Off Delay Time

36

ns

Turn-Off Fall Time

40

ns

Total Gate Charge

19

nC

Gate-Source Charge

3.2

nC

Gate-Drain Charge

10.8

nC