4N70 datasheet(2/6 Pages) UTC

2 / 6 page

4N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-340.A

ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

4.4

Continuous

4.0

Drain Current

Pulsed (Note 2)

IDM

Single Pulsed (Note 3)

EAS

260

Avalanche Energy

Repetitive (Note 2)

EAR

10.6

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

Junction Temperature

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°С/W

Junction to Case

θJc

3.47

°С/W

ELECTRICAL CHARACTERISTICS (Ta =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

700

Drain-Source Leakage Current

IDSS

VDS = 700 V, VGS = 0 V

μA

Forward

VGS = 30 V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature

Coefficient

DSS

ID = 250 μA, Referenced to 25°C

0.6

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 2.2 A

2.8

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

520 670

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS = 25 V, VGS = 0 V, f = 1MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

100

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

VDD = 350V, ID = 4.0A, RG = 25Ω

(Note 1, 2)

Total Gate Charge

Gate-Source Charge

QGS

3.4

Gate-Drain Charge

QGD

VDS= 560V, ID= 4.0A, VGS= 10 V

(Note 1, 2)

7.1

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