4N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-505.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Continuous

4.0

A

Drain Current

Pulsed (Note 1)

15.6

A

Single Pulsed (Note 2)

460

mJ

Avalanche Energy

Repetitive (Note 1)

13

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.0

V/ns

TO-220

106

W

Power Dissipation

TO-220F/TO-220F1

36

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

°C/W

Junction to Ambient

TO-220F/TO-220F1

62.5

°C/W

TO-220

1.18

°C/W

Junction to Case

TO-220F/TO-220F1

3.47

°C/W