4N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-479.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

900

V

Gate to Source Voltage

±30

V

Avalanche Current (Note 1)

4

A

Continuous

4

A

Continuous Drain Current

Pulsed (Note 1)

16

A

Single Pulsed (Note 2)

570

mJ

Avalanche Energy

Repetitive (Note 1)

14

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Power Dissipation

140

W

Operating Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction-to-Ambient

62.5

°C/W

Junction-to-Case

0.89

°C/W