6N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-487

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

6

A

Continuous

6 (Note 6)

A

Drain Current

Pulsed (Note 1)

24(Note 6)

A

Single Pulsed (Note 2)

270

mJ

Avalanche Energy

Repetitive (Note 1)

7.3

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Power Dissipation

38

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.31

°C/W