7N70 datasheet(2/8 Pages) UTC

2 / 8 page

7N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-103,B

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

Gate-Source Voltage

VGSS

±30

TC = 25°C

7.0

Continuous Drain Current

TC = 100°C

4.7

Drain Current Pulsed (Note 1)

IDM

Avalanche Energy, Single Pulsed (Note 2)

EAS

530

Avalanche Energy, Repetitive, Limited by TJMAX

EAR

14.2

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220F

142

Power Dissipation (TC = 25°C)

TO-220F1

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F

62.5

°C/W

Junction to Ambient

TO-220F1

θJA

62.5

°C/W

TO-220F

0.88

°C/W

Junction to Case

TO-220F1

θJC

2.6

°C/W

ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 μA

700

VDS = 700 V, VGS = 0 V

μA

Drain-Source Leakage Current

IDSS

VDS = 560 V, TC = 125°C

μA

Forward

VGS = 30 V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature

Coefficient

△

DSS/△TJ

ID = 250 μA, Referenced to 25°C

0.67

V/℃

ON Characteristics

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

2.0

4.0

Drain-Source ON-State Resistance

RDS(ON)

VGS = 10 V, ID = 3.5 A

1.35 1.5

Ω

Forward Transconductance

gFS

VDS = 40 V, ID = 3.5 A (Note 4)

8.0

Dynamic Characteristics

Input Capacitance

CISS

1200 1600 pF

Output Capacitance

COSS

150 190

Reverse Transfer Capacitance

CRSS

VDS = 25 V, VGS = 0 V, f = 1MHz

Switching Characteristics

Turn-on Delay Time

tD(ON)

Turn-on Rise Time

165

Turn-off Delay Time

tD(OFF)

160

Turn-off Fall Time

VDD = 350V, ID = 7.0 A

(Note 4, 5)

120

Total Gate Charge

Gate-Source Charge

QGS

6.5

Gate-Drain Charge

QDD

VDS= 560V, ID= 7.0A, VGS= 10 V

(Note 4, 5)

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