8N80 datasheet(2/5 Pages) UTC

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8N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-471.a

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±30

Drain Current (Continuous) (TC=25°C)

Drain Current (Pulsed) (Note 1)

IDM

Avalanche Current (Note 1)

IAR

Single Pulse Avalanche Energy (Note 2)

EAS

850

Repetitive Avalanche Energy (Note 1)

EAR

17.8

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

Total Power Dissipation (TC=25°C)

178

Linear Derating Factor above TC=25°C

1.43

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

Junction to Case

θJC

0.7

°C/W

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

800

Breakdown Voltage Temperature

Coefficient

△

BVDSS/△TJ Reference to 25°C, ID=250µA

0.5

V/°C

VDS=800V, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=640V, TC=125°C

100

µA

Gate- Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=4A

0.94 1.55

Ω

Forward Transconductance (Note 1)

gFS

VDS=50V, ID=4A

5.6

DYNAMIC PARAMETERS

Input Capacitance

CISS

1580 2050

Output Capacitance

COSS

135

175

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

(Note 1, Note 2)

Total Gate Charge

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

VGS=10V, VDS=640V, ID=8A

Turn-ON Delay Time

tD(ON)

Rise Time

110

230

Turn-OFF Delay Time

tD(OFF)

140

Fall-Time

VDD=400V, ID=8A, RG=25Ω

150

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=8A, VGS=0V

1.4

Reverse Recovery Time (Note 1)

tRR

690

Reverse Recovery Charge (Note 1)

QRR

IS=8A, VGS=0V, dIF/dt=100A/µs

8.2

µC

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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