9N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-493.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 1)

9

A

Continuous

9

A

Drain Current (Continuous)

Pulsed (Note 1)

36

A

Single Pulsed (Note 2)

900

mJ

Avalanche Energy

Repetitive (Note 1)

24

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

2.0

V/ns

Power Dissipation

49

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

2.55

°C/W