8N60 datasheet(2/8 Pages) UTC

2 / 8 page

8N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-115,D

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

8N60-A

600

Drain-Source Voltage

8N60-B

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

7.5

Continuous

7.5

Drain Current

Pulsed (Note 2)

IDM

Single Pulsed (Note 3)

EAS

230

Avalanche Energy

Repetitive (Note 2)

EAR

14.7

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262

147

Power Dissipation

TO-220F/TO-220F1

Junction Temperature

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by TJ

3. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

TO-220/TO-262

62.5

°C/W

Junction to Ambient

TO-220F/TO-220F1

θJA

62.5

°C/W

TO-220/TO-262

0.85

°C/W

Junction to Case

TO-220F/TO-220F1

θJC

2.6

°C/W

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

8N60-A

600

Drain-Source Breakdown Voltage

8N60-B

BVDSS

VGS = 0 V, ID = 250 μA

650

Drain-Source Leakage Current

IDSS

VDS = 600 V, VGS = 0 V

µA

Forward

VGS = 30 V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature

Coefficient

△

DSS/△TJ

ID = 250 μA, Referenced to 25°C

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 3.75 A

1.0

1.2

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

965 1255 pF

Output Capacitance

COSS

105 135

Reverse Transfer Capacitance

CRSS

VDS = 25 V, VGS = 0 V, f = 1MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

16.5

Turn-On Rise Time

60.5 130

Turn-Off Delay Time

tD(OFF)

170

Turn-Off Fall Time

VDD = 300V, ID = 7.5 A, RG = 25Ω

(Note 1, 2)

64.5 140

Total Gate Charge

Gate-Source Charge

QGS

4.5

Gate-Drain Charge

QGD

VDS= 480V,ID= 7.5A, VGS= 10 V

(Note 1, 2)

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