10N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-502.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

900

V

Gate-Source Voltage

±30

V

Continuous

10

A

Drain Current

Pulsed (Note 1)

40

A

Avalanche Current (Note 1)

10

A

Single Pulsed (Note 2)

794

mJ

Avalanche Energy

Repetitive (Note 1)

28

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

1.5

V/ns

TO-220

156

W

Power Dissipation

TO-220F1

50

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

°C/W

Junction to Ambient

TO-220F1

62.5

°C/W

TO-220

0.8

°C/W

Junction to Case

TO-220F1

2.5

°C/W