22N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-216.E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current

22

A

Continuous Drain Current

22

A

Pulsed Drain Current (Note 1)

88

A

Single Pulsed

380

mJ

Avalanche Energy

Repetitive

37

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

18

V/ns

Power Dissipation

370

W

Junction Temperature

150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C /W

Junction to Case

0.34

°C /W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

600

V

Drain-Source Leakage Current

50

µA

Gate- Source Leakage Current

±100

nA

Breakdown Voltage Temperature

Coefficient

Referenced to 25°C

0.30

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-Resistance

240

280

mΩ

DYNAMIC PARAMETERS

Input Capacitance

3570

pF

Output Capacitance

350

pF

Reverse Transfer Capacitance

36

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

26

ns

Turn-ON Rise Time

99

ns

Turn-OFF Delay Time

48

ns

Turn-OFF Fall-Time

37

ns

Total Gate Charge

150

nC

Gate Source Charge

45

nC

Gate Drain Charge

(Note 4)

76

nC