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30N06 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 30N06
Description  30 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  8 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

30N06 Datasheet(HTML) 2 Page - Unisonic Technologies

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30N06
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-087.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
TC = 25℃
30
A
Continuous Drain Current
TC = 100℃
ID
21.3
A
Pulsed Drain Current (Note 1)
IDM
120
A
Single Pulsed (Note 2)
EAS
300
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7.5
V/ns
TO-220
79
W
Power Dissipation
TO-220F
PD
45
W/℃
Junction Temperature
TJ
+150
℃
Operation Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
TO-220
62
°C/W
Junction-to-Ambient
TO-220F
θJA
62
°C/W
TO-220
1.9
°C/W
Junction-to-Case
TO-220F
θJC
2.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
60
V
Drain-Source Leakage Current
IDSS
VDS = 60 V, VGS = 0 V
10
µA
Forward
VGS = 20V, VDS = 0 V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS = -20V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID =250 µA, Referenced to 25℃
0.06
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 15 A
32
40
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
800
pF
Output Capacitance
COSS
300
pF
Reverse Transfer Capacitance
CRSS
VGS = 0 V, VDS = 25 V, f =
1MHz
80
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
12
ns
Turn-On Rise Time
tR
79
ns
Turn-Off Delay Time
tD(OFF)
50
ns
Turn-Off Fall Time
tF
VDD = 30V, ID =15 A, VGS=10V
(Note 4, 5)
52
ns
Total Gate Charge
QG
20
30
nC
Gate-Source Charge
QGS
6
nC
Gate-Drain Charge
QGD
VDS = 60V, VGS = 10 V, ID =
24A (Note 4, 5)
9
nC



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