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BD139 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BD139
Description  NPN POWER TRANSISTORS
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BD139 Datasheet(HTML) 2 Page - Unisonic Technologies

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BD139
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R204-007.B
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
1.5
A
Peak Collector Current
ICM
2
A
Peak Base Current
lBM
1
A
TO-126
1.25
W
Power Dissipation (Ta=25°C)
TO-251
PD
1
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IE=0, VCB=30V
100
nA
Collector Cut-Off Current
ICBO
IE=0, VCB=30V, TJ=125°C
10
μA
Emitter Cut-Off Current
IEBO
IC=0, VEB=5V
100
nA
IC=5mA
40
IC =150mA
63
250
DC Current Gain
VCE=2V (See Fig.1)
IC =500mA
25
BD139-10
63
160
DC Current Gain
BD139-16
hFE
IC =150mA, VCE=2V
(See Fig.1)
100
250
Collector-Emitter Saturation Voltage
VCE(SAT) IC =500 mA, IB=50mA
0.5
V
Base-Emitter Voltage
VBE
IC =500 mA, VCE=2V
1
V
Transition Frequency
fT
IC =500 mA, VCE=5V, f=100MHz
190
MHz



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