IXYS reserves the right to change limits, test conditions, and dimensions.

IXFC 20N80P

IXFR 20N80P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 20 V; I

12

23

S

C

iss

4680

pF

C

oss

V

GS

= 0 V, V

360

pF

C

rss

28

pF

t

d(on)

22

ns

t

r

V

GS

= 10 V, V

24

ns

t

d(off)

R

G

= 3

Ω (External)

70

ns

t

f

25

ns

Q

g(on)

85

nC

Q

gs

V

GS

= 10 V, V

25

nC

Q

gd

27

nC

R

thJC

0.75

°C/W

R

thCS

0.21

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

20

A

I

SM

Repetitive

60

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

250

ns

I

RM

V

8

A

Q

RM

0.8

μC

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

ISOPLUS220 (IXFC) Outline

IXYS CO 0177 R0

Note:

Bottom heatsink (Pin 4) is

electrically isolated from Pin

1,2, or 3.

ISOPLUS247 (IXFR) Outline