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IXFC22N60P Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFC22N60P Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page ![]() © 2006 IXYS All rights reserved DS99439E(02/06) PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Characteristic Values (T J = 25° C unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0 V, ID = 250 µA 600 V V GS(th) V DS = VGS, ID = 4 mA 3.0 5.0 V I GSS V GS = ± 30 VDC, VDS = 0 ±100 nA I DSS V DS = VDSS 25 µA V GS = 0 V T J = 125° C 250 µA R DS(on) V GS = 10 V, ID = IT , Note 1 360 m Ω Symbol Test Conditions Maximum Ratings V DSS T J = 25° C to 150° C 600 V V DGR T J = 25° C to 150° C; RGS = 1 MΩ 600 V V GS Continuous ± 30 V V GSM Tranisent ± 40 V I D25 T C = 25° C12 A I DM T C = 25° C, pulse width limited by TJM 66 A I AR T C = 25° C22 A E AR T C = 25° C40 mJ E AS T C = 25° C 1.0 J dv/dt I S ≤I DM, di/dt ≤100 A/µs, VDD ≤VDSS 10 V/ns T J ≤150° C, RG = 4 Ω P D T C = 25° C 130 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 ° C V ISOL 50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~ F C Mounting Force 11..65/2.5..15 N/lb Weight 2 g V DSS = 600 V I D25 =12 A R DS(on) ≤≤≤≤≤ 360 mΩ Ω Ω Ω Ω t rr ≤≤≤≤≤ 200 ns IXFC 22N60P (Isolated back surface*) G = Gate D = Drain S = Source ISOPLUS220TM (IXFC) E153432 G D S Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low R DS (on) HDMOS TM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI) |
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