IXFT16N80P datasheet(1/5 Pages) IXYS

Part #	IXFT16N80P

Description	PolarHV Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

G

D

S

G = Gate

D = Drain

S = Source

TAB = Drain

DS99599E(07/06)

PolarHVTM

Power MOSFET

V

DSS

= 800

V

I

D25

=16

A

R

DS(on)

≤≤≤≤≤ 600 mΩ

Ω

t

rr

≤≤≤≤≤ 250 ns

N-Channel Enhancement Mode

Fast Recovery Diode

Avalanche Rated

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

800

V

GS(th)

V

DS

= V

GS, ID = 4 mA

3.0

5.0

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

600

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

800

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C16

A

I

DM

T

C = 25°C, pulse width limited by TJM

40

A

I

AR

T

C = 25°C8

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

1.0

J

dv/dt

I

S ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS

10

V/ns

T

J

≤ 150°C, R

G = 5 Ω

P

D

T

C = 25°C

460

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

° C

T

SOLD

Plastic body for 10 s

260

° C

M

d

Mounting torque (TO-247)

1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220)

11..65/2.5..15

N/lb

Weight

TO-247

6.0

g

TO-268

5.0

g

PLUS220 & PLUS220SMD

4.0

g

IXFH 16N80P

IXFT 16N80P

IXFV 16N80P

IXFV 16N80PS

TO-268 (IXFT)

G

S

D (TAB)

TO-247 (IXFH)

G

S

D (TAB)

PLUS220SMD (IXFV...S)

G

S

D

PLUS220 (IXFV)

D (TAB)

Features

Fast Recovery diode

Unclamped Inductive Switching (UIS)

rated

International standard packages

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

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