IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 16N80P

IXFT 16N80P

IXFV 16N80P IXFV 16N80PS

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 20 V; I

9

16

S

C

iss

4600

pF

C

oss

V

GS

= 0 V, V

330

pF

C

rss

23

pF

t

d(on)

27

ns

t

r

V

GS

= 10 V, V

32

ns

t

d(off)

R

G

= 5

Ω (External)

75

ns

t

f

29

ns

Q

g(on)

71

nC

Q

gs

V

GS

= 10 V, V

21

nC

Q

gd

23

nC

R

thJC

0.27

°C/W

R

thCS

(TO-247)

0.21

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

16

A

I

SM

Repetitive

48

A

V

SD

I

1.5

V

t

rr

I

150

250

ns

I

RM

V

7

A

Q

RM

0.7

μC

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537