IXFH22N60P datasheet(1/5 Pages) IXYS

Part #	IXFH22N60P

Description	PolarHV HiPerFET Power MOSFETs

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

G = Gate

D = Drain

S = Source

TAB = Drain

DS99315E(03/06)

PolarHVTM HiPerFET

Power MOSFETs

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

l Fast intrinsic diode

l Unclamped Inductive Switching (UIS)

rated

l International standard packages

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

600

V

GS(th)

V

DS = VGS, ID = 4 mA

3.0

5.5

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

250

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

350

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25° C to 150° C

600

V

DGR

T

J = 25° C to 150° C; RGS = 1 MΩ

600

V

GS

Continuous

±30

V

GSM

Tranisent

±40

V

I

D25

T

C = 25° C22

A

I

DM

T

C = 25° C, pulse width limited by TJM

66

A

I

AR

T

C = 25° C22

A

E

AR

T

C = 25° C40

mJ

E

AS

T

C = 25° C

1.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS

20

V/ns

T

J ≤150° C, RG = 4 Ω

P

D

T

C = 25° C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

(TO-247)

1.13/10 Nm/lb.in.

F

C

Mounting Force

(PLUS220)

11..65/2.5..15

Nm/lb.

Weight

TO-247

6

g

PLUS220 & PLUS220SMD

4

g

G

D

S

TO-247 (IXFH)

V

DSS

= 600

V

I

D25

=22

A

R

DS(on) ≤

≤≤≤≤ 350 m Ω

Ω

t

rr

≤≤≤≤≤ 200 ns

IXFH 22N60P

IXFV 22N60P

IXFV 22N60PS

D (TAB)

PLUS220 (IXFV)

G

S

PLUS220SMD (IXFV...S)

D (TAB)

G

S

D

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