IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 36N60P IXFK 36N60P

IXFT 36N60P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ. Max.

g

fs

V

25

39

S

C

iss

5800

pF

C

oss

V

GS

= 0 V, V

570

pF

C

rss

30

pF

t

d(on)

30

ns

t

r

V

25

ns

t

d(off)

R

G

=2

Ω (External)

80

ns

t

f

22

ns

Q

g(on)

102

nC

Q

gs

V

34

nC

Q

gd

36

nC

R

thJC

0.19

° C/W

R

thCS

TO-247

0.21

° C/W

R

thCS

TO-264

0.15

° C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ. Max.

I

S

V

36

A

I

SM

Repetitive

80

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

200

ns

Q

RM

V

0.8

µC

I

RM

6.0

A

TO-268 (IXFT)Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

TO-264 (IXFK) Outline

TO-247 AD (IXFH) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205 0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

1

2

3