IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

6,583,505

Pulse Width - Seconds

0.02

0.04

0.06

0.08

0.20

0.40

0.01

0.10

V

0

5

10

15

20

25

100

1000

10000

V

0.4

0.6

0.8

1.0

1.2

0

20

40

60

80

100

T

T

Gate Charge - nC

0

50

100

150

200

250

0

2

4

6

8

10

12

14

F = 1MHz

V

T

Vds=300V

I

I

F = 1MHz

Ciss

Coss

Crss

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the

Intrinsic Diode

Figure 10. Transient Thermal Resistance

IXFK 32N50Q

IXFX 32N50Q