IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

Note 2

32

50

S

C

iss

10000

pF

C

oss

V

1300

pF

C

rss

330

pF

t

d(on)

35

ns

t

r

V

48

ns

t

d(off)

R

100

ns

t

f

24

ns

Q

g(on)

380

nC

Q

gs

V

70

nC

Q

gd

170

nC

R

thJC

0.225 K/W

R

thCK

0.05

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

44

A

I

SM

Repetitive;

176

A

pulse width limited by T

JM

V

SD

I

1.3

V

t

rr

I

250

ns

Q

RM

1.2

µC

I

RM

8A

Note: 1. Pulse width limited by T

JM

2. Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

3. Test current I

IXFL 44N80

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