IXFR10N100Q datasheet(1/2 Pages) IXYS

Part #	IXFR10N100Q

Description	HiPerFET Power MOSFETs ISOPLUS247 Q CLASS

PDF	2 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

12N100

10

A

10N100

9

A

I

DM

T

C

= 25

°C, Pulse width limited by T

JM

12N100

48

A

10N100

40

A

I

AR

T

C

= 25

°C

12N100

12

A

10N100

10

A

E

AR

T

C

= 25

°C30

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Weight

5

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3mA

1000

V

GS(th)

V

DS = VGS, ID = 4mA

2.5

5.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = 0.8•VDSS

T

J

= 25

°C50

µA

V

GS = 0 V

T

J

= 125

°C

1

mA

R

DS(on)

V

GS = 10 V, ID = IT

12N100

1.1

Ω

Notes 1 & 2

10N100

1.2

Ω

DS98589-B (10/02)

ISOPLUS 247TM

Features

● Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

● Low drain to tab capacitance(<50pF)

● Low R

DS (on) HDMOS

TM process

● Rugged polysilicon gate cell structure

● Unclamped Inductive Switching (UIS)

rated

● Fast intrinsic Rectifier

Applications

● DC-DC converters

● Battery chargers

● Switched-mode and resonant-mode

power supplies

● DC choppers

● AC motor control

Advantages

● Easy assembly

● Space savings

● High power density

G = Gate

D = Drain

S = Source

* Patent pending

Isolated back surface*

V

DSS

I

D25

R

DS(on)

IXFR 12N100Q 1000 V

10 A

1.1

Ω

IXFR 10N100Q 1000 V

9 A

1.20

Ω

t

rr ≤

≤≤≤≤ 300 µµµµµs

HiPerFETTM Power MOSFETs

ISOPLUS247TM Q CLASS

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated, High dV/dt

Low Gate Charge and Capacitances

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IXFR10N100Q Datasheet(PDF) 1 Page - IXYS Corporation

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