ΙΞΨΣρεσερϖεστηεριγηττοχηανγελιμιτσ,τεστχονδιτιονσ,ανδδιμενσιονσ.

FMP26-02P

Ref: IXYS CO 0077 R0

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Characteristic Values

(T

Min.

Typ.

Max.

BV

DSS

V

- 200

V

V

GS(th)

V

- 2.5

- 4.5

V

I

GSS

V

± 100 nA

I

DSS

V

-10

μA

T

- 150

μA

R

DS(on)

V

170 m

Ω

g

fs

V

10

17

S

C

iss

2740

pF

C

oss

V

540

pF

C

rss

100

pF

t

d(on)

Resistive Switching Times

18

ns

t

r

V

V

33

ns

t

d(off)

R

46

ns

t

f

21

ns

Q

g(on)

56

nC

Q

gs

V

V

18

nC

Q

gd

20

nC

R

thJC

1.0

°C/W

R

thCS

0.15

°C/W

Drain-Source Diode

Characteristic Values

(T

Symbol

Min.

Typ.

Max.

I

S

V

- 17

A

I

SM

Repetitive, pulse width limited by T

JM

-104

A

V

SD

I

- 3.2

V

t

rr

I

240

ns

Q

RM

V

2.2

μC

I

RM

-18

A