FMP76-010T datasheet(1/4 Pages) IXYS

Part #	FMP76-010T

Description	Trench P & N-Channel Power MOSFET Common Drain Topology

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

TrenchTM P & N-Channel

Power MOSFET

Common Drain Topology

DS100037(09/08)

Symbol

Test Conditions

Characteristic Values

Min.

Typ.

Max.

C

P

Coupling capacitance between shorted

40

pF

pins and mounting tab in the case

d

S ,dA

pin - pin

1.7

mm

d

S ,dA

pin - backside metal

5.5

mm

Weight

9

g

FMP76-010T

Features

Silicon chip on Direct-Copper Bond

(DCB) substrate

- UL recognized package

- Isolated mounting surface

- 2500V electrical isolation

Avalanche rated

Low Q

G

Low Drain-to-Tab capacitance

Low package inductance

Advantages

Low gate drive requirement

High power density

Low drain to ground capacitance

Fast switching

Applications

DC and AC motor drives

Class AB audio amplifiers

Multi-phase DC to DC converters

Industrial battery chargers

Switching power supplies

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

- 100

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

- 100

V

GSS

Continuous

± 20

V

GSM

Transient

± 30

V

I

D25

T

C = 25°C

- 54

A

I

DM

T

C = 25°C, pulse width limited by TJM

- 230

A

I

A

T

C = 25°C

- 38

A

E

AS

T

C = 25°C

1.0

J

P

D

T

C = 25°C

132

W

P - CHANNEL

Advance Technical Information

Symbol

Test Conditions

Maximum Ratings

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOLD

50/60H

Z, RMS, t = 1min, leads-to-tab

2500

~V

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

F

C

Mounting force

20..120 / 4.5..27

N/lb.

P CH.

N CH.

V

DSS

- 100V

100V

I

D25

- 54A

62A

R

DS(on)

24m

Ω

11m

Ω

t

rr(typ)

70ns

67ns

T2

3

5

4

1

2

T1

2

3

4

5

1

ISOPLUS i4-PakTM

1

5

Isolated Tab

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