IXFV12N80P datasheet(1/5 Pages) IXYS

Part #	IXFV12N80P

Description	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

G = Gate

D = Drain

S = Source

TAB = Drain

DS99476E(07/06)

PolarHVTM HiPerFET

Power MOSFET

IXFH12N80P

IXFQ12N80P

IXFV12N80P

IXFV12N80PS

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

800

V

GS(th)

V

DS

= V

GS, ID = 2.5 mA

3.0

5.5

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

250

μA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25 , Note 1

0.85

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GS

Continuous

±30

V

GSM

Tranisent

±40

V

I

D25

T

C = 25°C12

A

I

DM

T

C = 25°C, pulse width limited by TJM

36

A

I

AR

T

C = 25°C6

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

0.8

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 5 Ω

P

D

T

C = 25°C

360

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque (TO-247, TO-3P)

1.13/10 Nm/lb.in.

F

C

Mounting force

(PLUS220,PLUS220SMD) 11..65/2.5..15

N/lb.

Weight

PLUS220 & PLUS220SMD

4.0

g

T0-3P

5.5

g

TO-247

6.0

g

TO-247 (IXFH)

D (TAB)

V

DSS

=

800

V

I

D25

=

12

A

R

DS(on)

≤≤≤≤≤ 0.85 Ω

Ω

t

rr

≤≤≤≤≤ 250 ns

G

S

D

PLUS220 (IXFV)

D (TAB)

PLUS220 SMD (IXFV...S)

G

S

D (TAB)

TO-3P (IXFQ)

G

D

S

D (TAB)

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IXFV12N80P Datasheet(PDF) 1 Page - IXYS Corporation

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