IXFV14N80P datasheet(1/5 Pages) IXYS

Part #	IXFV14N80P

Description	PolarHV HiPerFET Power MOSFET

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C

800

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

800

V

GS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C14

A

I

DM

T

C = 25°C, pulse width limited by TJM

40

A

I

AR

T

C = 25°C7

A

E

AR

T

C = 25°C30

mJ

E

AS

T

C = 25°C

500

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 5 Ω

P

D

T

C = 25°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque (TO-247, TO-3P)

1.13/10 Nm/lb.in.

Weight

PLUS220, PLUS220 SMD

2

g

TO-268, TO-3P

5.5

g

TO-247

6

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99593E(07/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250μA

800

V

GS(th)

V

DS

= V

GS, ID = 4 mA

3.0

5.5

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

720 m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

IXFH 14N80P

IXFQ 14N80P

IXFT 14N80P

IXFV 14N80P

IXFV 14N80PS

V

DSS

= 800

V

I

D25

=

14

A

R

DS(on)

≤≤≤≤≤ 720 mΩ

Ω

t

rr

≤≤≤≤≤ 250 ms

TO-247 (IXFH)

G

S

G

S

D

PLUS220 (IXFV)

D (TAB)

G

S

PLUS220SMD (IXFV...S)

D (TAB)

(TAB)

G

S

D

TO-3P (IXFQ)

TO-268 (IXFT)

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