IXFP7N80PM datasheet(1/4 Pages) IXYS

Part #	IXFP7N80PM

Description	PolarHV HiPerFET Power MOSFET

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

DS99598E(08/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

800

V

GS(th)

V

DS

= V

GS, ID = 1 mA

3.0

5.0

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

500

μA

R

DS(on)

V

GS = 10 V, ID = 3.5 A

1.44

Ω

Note 1

PolarHVTM HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFP7N80PM

V

DSS

= 800 V

I

D25

=

3.5 A

R

DS(on)

≤≤≤≤≤ 1.44 Ω

Ω

t

rr

≤≤≤≤≤ 250 ns

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

3.5

A

I

DM

T

C = 25°C, pulse width limited by TJM

18

A

I

AR

T

C = 25°C4

A

E

AR

T

C = 25°C20

mJ

E

AS

T

C = 25°C

300

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 10 Ω

P

D

T

C = 25°C50

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

3.0

g

G = Gate

D = Drain

S = Source

Features

Plastic overmolded tab for electrical

isolation

Fast intrinsic diode

International standard package

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

OVERMOLDED TO-220

(IXTP...M) OUTLINE

G

D

S

Isolated Tab

(Electrically Isolated Tab)

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