IXFR24N80P datasheet(1/4 Pages) IXYS

Part #	IXFR24N80P

Description	PolarHV HiPerFET Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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PolarHVTM HiPerFET

Power MOSFET

V

DSS

=

800

V

I

D25

=13

A

R

DS(on)

≤≤≤≤≤

420

m

Ω

t

rr

≤≤≤≤≤

200

ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

International standard package

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 μA

800

V

GS(th)

V

DS

= V

GS, ID = 4 mA

3.0

5.0

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C

1000

μA

R

DS(on)

V

GS = 10 V, ID =

I

T (note 1)

420

m

Ω

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C13

A

I

DM

T

C = 25°C, pulse width limited by TJM

55

A

I

AR

T

C = 25°C12

A

E

AR

T

C = 25°C50

mJ

E

AS

T

C = 25°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C = 25°C

208

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

° C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

F

C

Mounting force

20..120/4.6..27

N/lb

Weight

5

g

G = Gate

D

= Drain

S = Source

S

G

D

ISOPLUS247 (IXFR)

E153432

(Electrically Isolated Back Surface)

DS99600E(07/06)

IXFR 24N80P

Isolated Tab

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