IXFR36N60P datasheet(1/4 Pages) IXYS

Part #	IXFR36N60P

Description	PolarHV HiPerFET Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

1 / 4 page

PolarHVTM HiPerFET

Power MOSFET

V

DSS

=

600

V

I

D25

=20

A

R

DS(on)

≤≤≤≤≤

200

m

Ω

t

rr

≤≤≤≤≤

200

ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l International standard package

l Fast recovery diode

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

600

V

GS(th)

V

DS = VGS, ID = 4 mA

3.0

5.0

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 125° C

250

µA

R

DS(on)

V

GS = 10 V, ID = IT (note 1)

200

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25° C to 150° C

600

V

DGR

T

J = 25° C to 150° C; RGS = 1 MΩ

600

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25° C20

A

I

DM

T

C = 25° C, pulse width limited by TJM

80

A

I

AR

T

C = 25° C36

A

E

AR

T

C = 25° C50

mJ

E

AS

T

C = 25° C

1.5

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

20

V/ns

T

J ≤150° C, RG = 2 Ω

P

D

T

C = 25° C

208

° C

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

V

ISOL

50/60 Hz, RMS, 1 minute

2500

V~

F

C

Mounting force

20..120/4.6..27

N/lb

Weight

5

g

G = Gate

D

= Drain

S = Source

S

G

D

ISOPLUS247 (IXFR)

E153432

(Electrically Isolated Back Surface)

DS99395E(03/06)

IXFR 36N60P

Isolated Tab

Similar Part No. - IXFR36N60P

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXFR36N50P	254Kb / 5P	PolarHV HiPerFET Power MOSFET

More results

Similar Description - IXFR36N60P

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXFC30N60P	141Kb / 4P	PolarHV HiPerFET Power MOSFET
	IXFC36N50P	254Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFH20N80P	331Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFH44N50P	301Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN48N60P	90Kb / 4P	PolarHV HiPerFET Power MOSFET
	IXFN80N50P	162Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN82N60P	158Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFN100N50P	158Kb / 5P	PolarHV HiPerFET Power MOSFET
	IXFA16N50P	221Kb / 4P	PolarHV HiperFET Power MOSFET
	IXFI7N80P	146Kb / 4P	PolarHV HiPerFET Power MOSFET

More results

IXFR36N60P Datasheet(PDF) 1 Page - IXYS Corporation

IXFR36N60P Datasheet(HTML) 1 Page - IXYS Corporation

Similar Part No. - IXFR36N60P

Similar Description - IXFR36N60P

Html Pages

1 2 3 4

Datasheet Download

Link URL