RJL6014DPP datasheet(2/7 Pages) RENESAS

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RJL6014DPP

Preliminary

R07DS0262EJ0200 Rev.2.00

Page 2 of 6

Mar 01, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

600

—

ID = 10 mA, VGS = 0

Zero gate voltage drain current

IDSS

—

A

VDS = 600 V, VGS = 0

Gate to source leak current

IGSS

—

±0.1

A

VGS = 30 V, VDS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

4.0

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

0.520

0.635



ID = 7.5 A, VGS = 10 V

Note5

Input capacitance

Ciss

—

1700

—

Output capacitance

Coss

—

167

—

Reverse transfer capacitance

Crss

—

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

101

—

Fall time

—

ID = 7.5 A

VGS = 10 V

RL = 40 

Rg = 10



Total gate charge

—

Gate to source charge

Qgs

—

7.8

—

Gate to drain charge

Qgd

—

20.8

—

VDD = 480 V

VGS = 10 V

ID = 15 A

Body-drain diode forward voltage

VDF

—

1.05

1.75

IF = 15 A, VGS = 0

Note5

Body-drain diode reverse recovery time

trr

—

180

—

IF = 15 A, VGS = 0

diF/dt = 100 A/s

Notes: 5. Pulse test

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