NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0126B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level (for SM, use –S)

│

│

│

│

│

│

SM = Surface Mount Round Tab

(MELF)

SMS = Surface Mount Square Tab

│

│

│

│

│

│

│

│

│

│

│

└

6638 = 125 V

6642 = 75 V

6643 = 50 V

4150 = 75 V

SDR6638, SDR6642, SDR6643,

& SDR4150 SERIES

300 mA

50 - 125 VOLTS

RECTIFIER

FEATURES:

•

Hyper Fast Reverse Recovery Time 4.5 - 6 ns

Max

•

Hermetically Sealed

•

Planar Passivated Chip

•

For High Efficiency Applications

•

Available in Axial, Subminiature Round Tab

& Subminiature Square Tab Versions

•

TX, TXV, and S-Level Screening Available

2/

1N4150-1

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage

DC Blocking Voltage

SDR6638

SDR6642

SDR6643

SDR4150

125

75

50

75

Volts

Average Rectified Forward Current

300

mAmps

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

2.5

Amps

Operating & Storage Temperature

-65 to +175

°C

Thermal Resistance

SM and SMS- Junction to End Tab

Axial- Junction to Lead @ .375”

100

325

°C/W

NOTES:

1/ For Ordering Information, Price, and Availability- Contact

Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows

Available on Request.

3/ Unless Otherwise Specified, All Electrical Characteristics

@25ºC.

Axial Leaded

SM

SMS