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SFF40N30Z Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFF40N30Z Datasheet(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page  NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00141H DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF40N30M SFF40N30Z Electrical Characteristics 5/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA BVDSS 300 310 –– V Drain to Source On State Resistance VGS = 10V, ID = 35A, Tj= 25ºC VGS = 10V, ID = 35A, Tj=125ºC RDS(on) –– –– 50 110 60 –– mΩ Gate Threshold Voltage VDS = VGS, ID = 1.0mA, Tj= 25ºC VDS = VGS, ID = 1.0mA, Tj= 125ºC VDS = VGS, ID = 1.0mA, Tj= -55ºC VGS(th) 2.5 1.5 –– 4.0 3.0 5.0 5.0 –– 6 V Gate to Source Leakage VGS = ±20V, Tj= 25ºC VGS = ±20V, Tj= 125ºC IGSS –– –– 10 30 ±100 –– nA Zero Gate Voltage Drain Current VDS = 300V, VGS = 0V, Tj = 25ºC VDS = 300V, VGS = 0V, Tj = 125ºC IDSS –– –– 0.01 5.0 25 250 μA μA Forward Transconductance VDS = 10V, ID = 35A, Tj = 25ºC gfs 20 33 –– Mho Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V VDS = 150V ID = 35A Qg Qgs Qgd –– –– –– 140 50 60 250 –– –– nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VGS = 10V VDS = 150V ID = 40A RG = 4.0Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 40 40 110 40 50 50 125 50 nsec Diode Forward Voltage IF = 40A, VGS = 0V VSD –– 0.95 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge IF = 10A, di/dt = 100A/usec trr Qrr –– –– 180 1.3 200 –– nsec μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss –– –– –– 5000 750 145 –– –– –– pF Available Part Numbers: Consult Factory PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254 (M) PIN 1 PIN 3 PIN 2 TO254Z (Z) PIN 3 PIN 2 PIN 1 |
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