NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0009B

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

└

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

│

│

│

│

└

S2I = SMD2 Isolated

M = TO-254

SFF25P20 Series

25 AMP / 200 Volts

150 mΩ typical

P-Channel MOSFET

Features:

•

polySi gate cell structure

•

Low ON-resistance

•

UIS (unclamped inductive switching) rated

•

Hermetically Sealed, Isolated Package

•

Low package inductance

•

Stress relief provided by flexible leads –

several options available

•

•

TX, TXV, S-Level screening available

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

-200

V

Gate – Source Voltage

Continuous

transient

±20

±30

V

Max. Continuous Drain Current

25

A

Max. Instantaneous Drain Current (Tj limited)

95

A

Max. Avalanche current

25

A

Repetitive Avalanche Energy

30

mJ

Total Power Dissipation

250

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case

0.83

0.6 typical

ºC/W

NOTES:

SMD 2 Isolated

TO-254

1/ For ordering information, price, operating curves, and

availability- Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows

available on request.

3/ Unless otherwise specified, all electrical characteristics

@25ºC.

NOTE: SEE DASH# DEFINITION TABLE

FOR AVAILABLE LEAD FORMING

CONFIGURATION