NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0003H

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR1 __ __ __

│

│

│

│

│

│

│

│

│

└

│

│

│

│

│

│

└

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level (for SM, use –S)

Package Type

SM = Surface Mount Round Tab

SMS = Surface Mount Square Tab

J = 600 V

B = 100 V

K = 800 V

D = 200 V

M = 1000 V

G = 400 V

SDR1ASM & SMS

thru

SDR1MSM & SMS

1.0 AMPS

50 ─ 1000 VOLTS

50 – 70 nsec ULTRA FAST RECTIFIER

FEATURES:

•

•

Single Chip Construction

•

PIV to 1000 Volts (1200V Version available)

•

Low Reverse Leakage Current

•

Hermetically Sealed

•

For High Efficiency Applications

•

Available in Round and Square Tab Versions

•

Metallurgically Bonded

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage

And

DC Blocking Voltage

SDR1A ..

SDR1B ..

SDR1D ..

SDR1G ..

SDR1J ..

SDR1K ..

SDR1M ..

50

100

200

400

600

800

1000

Volts

Average Rectified Forward Current

1

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

25

Amps

Operating & Storage Temperature

-65 to +175

ºC

Thermal Resistance, Junction to End Tab

SM & SMS

28

ºC/W

NOTES:

1/ For Ordering Information, Price, Operating Curves, and Availability- Contact

Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

SM (Round Tab)

SMS (Square Tab)