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SDR50U080 Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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SDR50U080 Datasheet(HTML) 1 Page - Solid States Devices, Inc |
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1 / 3 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0117E DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SDR50U __ __ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level │ │ │ │ └ Package Type M = TO-254 N = TO-258 P = TO-259 │ │ │ │ │ │ │ │ └ Voltage/Family 080 = 800V 090 = 900V 100 = 1000V 110 = 1100V 120 = 1200V SDR50U080 thru SDR50U120 Series 50 AMP Ultra Fast Recovery Rectifier 800 -1200 Volts 50 nsec Features: • Ultra Fast Recovery: 45 nsec typical • High Surge Rating • Low Reverse Leakage Current • Low Forward Voltage Drop • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach available • Ultrasonic Aluminum Wire Bonds • Ceramic Seals for improved hermeticity available • TX, TXV, Space Level Screening Available Consult Factory. 2/ Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR50U080 SDR50U090 SDR50U100 SDR50U110 SDR50U120 VRRM VRWM VR 800 900 1000 1100 1200 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC) 3/ Io 50 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) 3/ IFSM 500 Amps Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to End Tab 3/ RθJE 1.0 ºC/W TO-254 (M) TO-258 (N) TO-259 (P) 1/ For ordering information, price, operating curves, and availability - Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Pins 2 & 3 connected. |
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