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SFT501 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFT501 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page  Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT501 and SFT503 Series Electrical Characteristic 4/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage IC = 50mA BVCEO 150 200 –– Volts Collector – Base Breakdown Voltage IC = 200µA BVCBO 200 275 –– Volts Emitter – Base Breakdown Voltage IE = 200µA BVEBO 7 13 –– Volts Collector – Cutoff Current VCE = 100 V ICEO –– –– 1.0 µA Collector – Cutoff Current VCB = 100 V ICBO –– –– 500 nA Emitter – Cutoff Current VEB = 6 V IEBO –– –– 500 nA DC Current Gain * SFT501 SFT503 VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A VCE = 5V, IC = 50mA VCE = 5V, IC = 2.5A VCE = 5V, IC = 5A hFE 20 30 20 50 50 40 –– –– 70 –– –– 70 –– –– –– –– –– –– –– Collector – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VCE(Sat) –– –– 0.35 0.6 0.75 1.5 Volts Base – Emitter Saturation Voltage * IC = 2.5A, IB = 250mA IC = 5.0A, IB = 500mA VBE(Sat) –– –– 1.0 1.2 1.3 1.5 Volts Current Gain Bandwidth Product VCE = 5V, IC = 0.5A, f = 10MHz fT 40 60 –– MHz Output Capacitance VCB = 10V, IE = 0A, f = 1MHz cob –– 130 225 pF Input Capacitance VBE = 10V, IC = 0A, f = 1MHz Cib –– 450 600 pF Delay Time td –– 25 50 nsec Rise Time tr –– 40 250 nsec Storage Time tS –– 320 600 nsec Fall Time VCC = 50V, IC = 5A, IB1 = IB2 = 0.5A tf –– 130 300 nsec NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. B17BH DATA SHEET #: TR0040D DOC |
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