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SFT6036 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFT6036 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
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2 / 4 page ![]() NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0120A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT6036 series Electrical Characteristics 3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage* IC = 100 mA BVCEO 80 95 - Volts Collector – Emitter Cutoff Current, VCE = 80V, IB = 0 ICEO - 0.05 100 uA Collector – Emitter Cutoff Current VCE = 80V, VBE (off)= 1.5V VCE = 80V, VBE (off)= 1.5V, TC= 125ºC ICEX - - 0.05 12.5 100 500 uA Collector Cutoff Current VCB = 80V ICBO - 0.05 500 uA Emitter Cutoff Current (VBE = 5V) IEBO 0.65 2 mA DC Current Gain* (IC = 0.5A, VCE = 3V) (IC = 2A, VCE = 3V) (IC = 4A, VCE = 3V) HFE 500 750 100 4,000 3,800 900 - 15,000 - Collector-Emitter Saturation Voltage* IC = 2A, IB = 8mA IC = 4A, IB = 40mA VCE (SAT)1 VCE (SAT)2 - - 1.1 1.6 2 3 V Base-Emitter Saturation Voltage* IC = 4A, IB = 40mA VBE (SAT)2 - 2.25 4 V Base-Emitter Voltage IC = 2A, VCE = 3V VBE (ON) - 1.65 2.8 V Small Signal Current Gain IC = 0.75A, VCE = 10V, f = 1MHz hfe 25 1400 - Output Capacitance VCB = 15V, IE = 0A, f = 2.0MHz Cob - 40 200 pF Electrical Characteristics 3/ Symbol Typical Units Delay Time Rise Time Storage Time Fall Time VCC= -30V IC= 4A IB1 = IB2 = 16mA td tr ts tf 45 200 600 450 ns ns ns ns Notes: * Pulse Test: Pulse Width = 300 μs. Duty Cycle = 2%. 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. PIN ASSIGNMENT (Standard) Package Collector Emitter Base TO-5 (/5) 3 1 2 TO-254(M) 1 2 3 TO-257(J) 1 2 3 SMD.3 (S.3) 1 2 3 SMD.5 (S.5) 1 2 3 |
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