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BCV49 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BCV49 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page ![]() 2007-03-29 1 BCV29, BCV49 1 2 2 3 NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV29 BCV49 EF EG 1=B 1=B 2=C 2=C 3=E 3=E SOT89 SOT89 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BCV29 BCV49 VCEO 30 60 V Collector-base voltage BCV29 BCV49 VCBO 40 80 Emitter-base voltage VEBO 10 Collector current IC 500 mA Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request |
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