BFP193W datasheet(1/7 Pages) INFINEON

Part #	BFP193W

Description	NPN Silicon RF Transistor

PDF	7 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2007-04-20

BFP193W

1

2

3

4

NPN Silicon RF Transistor*

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• f

T = 8 GHz, F = 1 dB at 900 MHz

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP193W

RCs

1 = E 2 = C 3 = E 4 = B

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

80

mA

Base current

IB

10

Total power dissipation2)

TS ≤ 66°C

Ptot

580

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-55 ... 150

Storage temperature

Tstg

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point3)

RthJS

≤ 145

K/W

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

3For calculation of RthJA please refer to Application Note Thermal Resistance

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